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2SD649 - Silicon NPN Power Transistor

2SD649 Description

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD649 .
High Breakdown Voltage: VCBO= 1500V (Min). High Reliability APPLICATIONS. Designed for line-operated horizontal deflection output applic.

2SD649 Applications

* Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCES Collector-Emitter Voltage VEBO Emitter-Base Voltage C www. DataSheet4U. com I Collector Current- Continuous w w s c s i .

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Datasheet Details

Part number
2SD649
Manufacturer
Inchange Semiconductor
File Size
214.44 KB
Datasheet
2SD649_InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

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Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor 2SD649-like datasheet