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2SD649 Datasheet - Inchange Semiconductor

2SD649 Silicon NPN Power Transistor

*High Breakdown Voltage: VCBO= 1500V (Min) *High Reliability APPLICATIONS *Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCES Collector-Emitter Voltage VEBO Emitter-Ba.

2SD649_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SD649

Manufacturer:

Inchange Semiconductor

File Size:

214.44 KB

Description:

Silicon npn power transistor.

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2SD649 2SD649 Silicon NPN Power Transistor Inchange Semiconductor