2SD649 Datasheet - Inchange Semiconductor

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2SD649 Silicon NPN Power Transistor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD649 .
High Breakdown Voltage: VCBO= 1500V (Min). High Reliability APPLICATIONS. Designed for line-operated horizontal deflection output applic.

2SD649_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SD649

Manufacturer:

Inchange Semiconductor

File Size:

214.44 KB

Description:

Silicon NPN Power Transistor

Applications

* Designed for line-operated horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCES Collector-Emitter Voltage VEBO Emitter-Base Voltage C www. DataSheet4U. com I Collector Current- Continuous w w s c s i .

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2SD649 Silicon NPN Power Transistor Inchange Semiconductor

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