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2SD692 Datasheet - Inchange Semiconductor

2SD692 Silicon NPN Darlingtion Power Transistor

*Built-in Base-Emitter Shunt Resistors *High DC current gain- hFE = 1000 (Min) @ IC =1 Adc *Collector-Emitter Breakdown Voltage- V(BR)CEO= 80V(Min) *Wide Area of Safe Operation *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *D.

2SD692_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SD692

Manufacturer:

Inchange Semiconductor

File Size:

209.73 KB

Description:

Silicon npn darlingtion power transistor.

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2SD692 2SD692 Silicon NPN Darlingtion Power Transistor Inchange Semiconductor

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