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2SD692 - Silicon NPN Darlingtion Power Transistor

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Part number 2SD692
Manufacturer Inchange Semiconductor
File Size 209.73 KB
Description Silicon NPN Darlingtion Power Transistor
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Description

Built-in Base-Emitter Shunt Resistors High DC current gain- hFE = 1000 (Min) @ IC =1 Adc Collector-Emitter Breakdown Voltage- V(BR)CEO= 80V(Min) Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier applications.

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