2SD692 Silicon NPN Darlingtion Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Darlingtion Power Transistor .
Built-in Base-Emitter Shunt Resistors. High DC current gain- hFE = 1000 (Min) @ IC =1 Adc. Collector-Emitter Breakdown Voltage- V(BR)CEO=.

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Datasheet Specifications

Part number: 2SD692
Manufacturer: Inchange Semiconductor
File Size: 209.73 KB
Datasheet: 2SD692_InchangeSemiconductor.pdf
Description: Silicon NPN Darlingtion Power Transistor

Applications

* Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCER Collector-Emitter Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continu

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2SD692 Silicon NPN Darlingtion Power Transistor Inchange Semiconductor

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