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2SD692 - Silicon NPN Darlingtion Power Transistor

2SD692 Description

isc Silicon NPN Darlingtion Power Transistor .
Built-in Base-Emitter Shunt Resistors. High DC current gain- hFE = 1000 (Min) @ IC =1 Adc. Collector-Emitter Breakdown Voltage- V(BR)CEO=.

2SD692 Applications

* Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCER Collector-Emitter Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continu

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Datasheet Details

Part number
2SD692
Manufacturer
Inchange Semiconductor
File Size
209.73 KB
Datasheet
2SD692_InchangeSemiconductor.pdf
Description
Silicon NPN Darlingtion Power Transistor

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Silicon NPN Darlingtion Power Transistor Inchange Semiconductor
Inchange Semiconductor 2SD692-like datasheet