BD649F NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BD649F .
High DC Current Gain. Low Saturation Voltage. Complement to Type BD650F. Minimum Lot-to-Lot variations for robust device performance.

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Datasheet Specifications

Part number: BD649F
Manufacturer: INCHANGE
File Size: 209.86 KB
Datasheet: BD649F-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A IC

BD649F Distributors

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BD649F NPN Transistor INCHANGE

INCHANGE BD649F-like datasheet