BD644 Datasheet - Inchange Semiconductor

BD644 Silicon PNP Darlington Power Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= -45V(Min) *High DC Current Gain : hFE= 750(Min) @IC= -3A *Low Saturation Voltage *Complement to Type BD643 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for use as .

BD644 Datasheet (193.69 KB)

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Datasheet Details

Part number:

BD644

Manufacturer:

Inchange Semiconductor

File Size:

193.69 KB

Description:

Silicon pnp darlington power transistor.

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BD644 Silicon PNP Darlington Power Transistor Inchange Semiconductor

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