BD644 Datasheet, Transistor, Inchange Semiconductor

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BD644

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Inchange Semiconductor

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193.69kb

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📄 Datasheet

Description:

Silicon pnp darlington power transistor.

Collector-Emitter Breakdown Voltage- : V(BR)CEO= -45V(Min)

High DC Current Gain : hFE= 750(Min) @IC= -3A

L

BD644 Application

• Applications
• Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER

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BD644

Inchange Semiconductor

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