BD644 Datasheet - Inchange Semiconductor

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BD644 Silicon PNP Darlington Power Transistor

isc Silicon PNP Darlington Power Transistor BD644 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -45V(Min). High DC Current Gain : hFE= 750(Min) @IC= -3A. Low Saturation Voltage. Co.

BD644_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

BD644

Manufacturer:

Inchange Semiconductor

File Size:

193.69 KB

Description:

Silicon PNP Darlington Power Transistor

Applications

* Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A

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