BD635 Datasheet - Inchange Semiconductor

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BD635 Silicon NPN Power Transistor

isc Silicon NPN Power Transistor BD635 .
DC Current Gain - : hFE = 40(Min. Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min. Complement to Type BD636. M.

BD635-InchangeSemiconductor.pdf

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Datasheet Details

Part number:

BD635

Manufacturer:

Inchange Semiconductor

File Size:

188.67 KB

Description:

Silicon NPN Power Transistor

Applications

* Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A ICM Collector Current-Pea

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BD635 Silicon NPN Power Transistor Inchange Semiconductor

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