Datasheet4U Logo Datasheet4U.com

BD635 Datasheet - Inchange Semiconductor

Silicon NPN Power Transistor

BD635 General Description

*DC Current Gain - : hFE = 40(Min.)@ IC= 25mA *Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) *Complement to Type BD636 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for amplifier and switching applications..

BD635 Datasheet (188.67 KB)

Preview of BD635 PDF

Datasheet Details

Part number:

BD635

Manufacturer:

Inchange Semiconductor

File Size:

188.67 KB

Description:

Silicon npn power transistor.

📁 Related Datasheet

BD63000MUV 3-phase brushless motor pre-driver (ROHM)

BD63001AMUV Three-Phase Brushless Motor Predriver (ROHM)

BD63002AMUV 3-Phase Brushless Motor Pre-driver (ROHM)

BD63002MUV 3-phase brushless motor pre-driver (ROHM)

BD63005AMUV Three-Phase Brushless Motor Driver (ROHM)

BD63005MUV 3-Phase Brushless Motor Driver (ROHM)

BD63006MUV Three-Phase Brushless Motor Driver (ROHM)

BD6300KU 3 in 1 Motor Driver (Rohm)

BD63015EFV Three Phase Brushless Motor Driver (ROHM)

BD63030EKV-C 3-Phase Brushless Motor Pre-driver (ROHM)

TAGS

BD635 Silicon NPN Power Transistor Inchange Semiconductor

Image Gallery

BD635 Datasheet Preview Page 2

BD635 Distributor