BD635 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor BD635 .
DC Current Gain - : hFE = 40(Min. Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min. Complement to Type BD636. M.

📥 Download Datasheet

BD635 Datasheet Preview — Preview of BD635 PDF

Datasheet Specifications

Part number: BD635
Manufacturer: Inchange Semiconductor
File Size: 188.67 KB
Datasheet: BD635-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A ICM Collector Current-Pea

BD635 Distributors

📁 Related Datasheet

BD63510EFV BD63520AEFV BD63521EFV BD63524EFV BD63536FJ BD63000MUV

📌 All Tags

BD635 Silicon NPN Power Transistor Inchange Semiconductor

Inchange Semiconductor BD635-like datasheet