Datasheet4U Logo Datasheet4U.com

BD635 - Silicon NPN Power Transistor

BD635 Description

isc Silicon NPN Power Transistor BD635 .
DC Current Gain - : hFE = 40(Min. Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min. Complement to Type BD636. M.

BD635 Applications

* Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A ICM Collector Current-Pea

📥 Download Datasheet

Preview of BD635 PDF
datasheet Preview Page 2

Datasheet Details

Part number
BD635
Manufacturer
Inchange Semiconductor
File Size
188.67 KB
Datasheet
BD635-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

📁 Related Datasheet

  • BD63510EFV - Micro step 36V Stepping Motor Drivers (Rohm)
  • BD63520AEFV - Stepping Motor Drivers (ROHM)
  • BD63521EFV - Stepping Motor Drivers (ROHM)
  • BD63524EFV - High-reliability Withstand Voltage Stepping Motor Driver (ROHM)
  • BD63536FJ - 3.0V to 30V Input 1ch Buck Controller (ROHM)
  • BD63000MUV - 3-phase brushless motor pre-driver (ROHM)
  • BD63001AMUV - Three-Phase Brushless Motor Predriver (ROHM)
  • BD63002AMUV - 3-Phase Brushless Motor Pre-driver (ROHM)

📌 All Tags

Silicon NPN Power Transistor Inchange Semiconductor
Inchange Semiconductor BD635-like datasheet