Datasheet Details
- Part number
- BD635
- Manufacturer
- Inchange Semiconductor
- File Size
- 188.67 KB
- Datasheet
- BD635-InchangeSemiconductor.pdf
- Description
- Silicon NPN Power Transistor
BD635 Description
isc Silicon NPN Power Transistor BD635 .
DC Current Gain -
: hFE = 40(Min.
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min.
Complement to Type BD636.
M.
BD635 Applications
* Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
2
A
ICM
Collector Current-Pea
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