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BD635 Datasheet - Inchange Semiconductor

BD635 Silicon NPN Power Transistor

*DC Current Gain - : hFE = 40(Min.)@ IC= 25mA *Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) *Complement to Type BD636 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for amplifier and switching applications..

BD635-InchangeSemiconductor.pdf

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Datasheet Details

Part number:

BD635

Manufacturer:

Inchange Semiconductor

File Size:

188.67 KB

Description:

Silicon npn power transistor.

BD635 Distributor

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BD635 BD635 Silicon NPN Power Transistor Inchange Semiconductor