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BD635 - Silicon NPN Power Transistor

BD635 Description

isc Silicon NPN Power Transistor BD635 .
DC Current Gain - : hFE = 40(Min. Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min. Complement to Type BD636. M.

BD635 Applications

* Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A ICM Collector Current-Pea

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Datasheet Details

Part number
BD635
Manufacturer
Inchange Semiconductor
File Size
188.67 KB
Datasheet
BD635-InchangeSemiconductor.pdf
Description
Silicon NPN Power Transistor

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Inchange Semiconductor BD635-like datasheet