BD684 Silicon PNP Power Transistor

Inchange Semiconductor

Description

isc Silicon PNP Darlington Power Transistor BD684 .
Collector. Emitter Breakdown Voltage. : V(BR)CEO = -120V. DC Current Gain. : hFE = 750(Min) @ IC= -1. Compleme.

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Datasheet Specifications

Part number: BD684
Manufacturer: Inchange Semiconductor
File Size: 189.89 KB
Datasheet: BD684-InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistor

Applications

* Designed for audio and video output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Curren

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BD684 Silicon PNP Power Transistor Inchange Semiconductor

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