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BD638 Datasheet - Inchange Semiconductor

BD638 Silicon PNP Power Transistor

*DC Current Gain - : hFE = 40(Min.)@ IC= -25mA *Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min.) *Complement to Type BD637 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for amplifier and switching application.

BD638-InchangeSemiconductor.pdf

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Datasheet Details

Part number:

BD638

Manufacturer:

Inchange Semiconductor

File Size:

192.20 KB

Description:

Silicon pnp power transistor.

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BD638 BD638 Silicon PNP Power Transistor Inchange Semiconductor

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