Datasheet4U Logo Datasheet4U.com

BD638 Datasheet - Inchange Semiconductor

BD638 - Silicon PNP Power Transistor

*DC Current Gain - : hFE = 40(Min.)@ IC= -25mA *Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min.) *Complement to Type BD637 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for amplifier and switching application

BD638-InchangeSemiconductor.pdf

Preview of BD638 PDF
BD638 Datasheet Preview Page 2

Datasheet Details

Part number:

BD638

Manufacturer:

Inchange Semiconductor

File Size:

192.20 KB

Description:

Silicon pnp power transistor.

📁 Related Datasheet

📌 All Tags