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BD634

Silicon PNP Power Transistor

BD634 General Description


*DC Current Gain - : hFE = 40(Min.)@ IC= -25mA
*Collector-Emitter Breakdown Voltage- : V(BR)CEO= -45V(Min.)
*Complement to Type BD633
*Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS
*Designed for amplifier and switching application.

BD634 Datasheet (191.53 KB)

Preview of BD634 PDF

Datasheet Details

Part number:

BD634

Manufacturer:

Inchange Semiconductor

File Size:

191.53 KB

Description:

Silicon pnp power transistor.

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BD634 Silicon PNP Power Transistor Inchange Semiconductor

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