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BD637 Datasheet - Inchange Semiconductor

BD637 Silicon NPN Power Transistor

*DC Current Gain - : hFE = 40(Min.)@ IC= 25mA *Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min.) *Complement to Type BD638 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for amplifier and switching applications..

BD637_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

BD637

Manufacturer:

Inchange Semiconductor

File Size:

189.23 KB

Description:

Silicon npn power transistor.

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BD637 BD637 Silicon NPN Power Transistor Inchange Semiconductor

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