BD637 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor BD637 .
DC Current Gain - : hFE = 40(Min. Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min. Complement to Type BD638. M.

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Datasheet Specifications

Part number: BD637
Manufacturer: Inchange Semiconductor
File Size: 189.23 KB
Datasheet: BD637_InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A ICM Collector Current-Pe

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BD637 Silicon NPN Power Transistor Inchange Semiconductor

Inchange Semiconductor BD637-like datasheet