Datasheet Details
- Part number
- BD678AG
- Manufacturer
- Inchange Semiconductor
- File Size
- 153.02 KB
- Datasheet
- BD678AG-InchangeSemiconductor.pdf
- Description
- Silicon PNP Power Transistor
BD678AG Description
INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor isc Product Specification BD678AG .
Collector.
Emitter Breakdown Voltage.
: V(BR)CEO = -60V.
DC Current Gain.
: hFE = 750(Min) @ IC= -2 A.
Complement.
BD678AG Applications
* Designed for use as output devices in complementary
general-purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-60 V
VCEO
Collector-Emitter Voltage
-60 V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Cont
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