BD678AG Silicon PNP Power Transistor

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor isc Product Specification BD678AG .
Collector. Emitter Breakdown Voltage. : V(BR)CEO = -60V. DC Current Gain. : hFE = 750(Min) @ IC= -2 A. Complement.

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Datasheet Specifications

Part number: BD678AG
Manufacturer: Inchange Semiconductor
File Size: 153.02 KB
Datasheet: BD678AG-InchangeSemiconductor.pdf
Description: Silicon PNP Power Transistor

Applications

* Designed for use as output devices in complementary general-purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Cont

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Silicon PNP Power Transistor Inchange Semiconductor

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