BD646 Datasheet - INCHANGE

BD646, PNP Transistor

isc Silicon PNP Darlington Power Transistor BD646 DESCRIPTION *Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) *High DC Current G

Applications

* Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A

BD646-INCHANGE.pdf