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BD648 PNP Transistor

BD648 Description

isc Silicon PNP Darlington Power Transistor BD648 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min). High DC Current Gain : hFE= 750(Min) @IC= -3A. Low Saturation Voltage. Co.

BD648 Applications

* Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A

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Datasheet Details

Part number
BD648
Manufacturer
INCHANGE
File Size
189.95 KB
Datasheet
BD648-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE BD648-like datasheet