BD647 NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor BD647 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min). High DC Current Gain : hFE= 750(Min) @IC= 3A. Low Saturation Voltage. Comp.

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Datasheet Specifications

Part number: BD647
Manufacturer: INCHANGE
File Size: 188.89 KB
Datasheet: BD647-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICP

BD647 Distributors

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BD647 NPN Transistor INCHANGE

INCHANGE BD647-like datasheet