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BD647F - NPN Transistor

BD647F Description

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BD647F .
High DC Current Gain. Low Saturation Voltage. Complement to Type BD648F. Minimum Lot-to-Lot variations for robust device performance.

BD647F Applications

* Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICP

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Datasheet Details

Part number
BD647F
Manufacturer
INCHANGE
File Size
210.05 KB
Datasheet
BD647F-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE BD647F-like datasheet