Datasheet Details
- Part number
- BD647F
- Manufacturer
- INCHANGE
- File Size
- 210.05 KB
- Datasheet
- BD647F-INCHANGE.pdf
- Description
- NPN Transistor
BD647F Description
isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor BD647F .
High DC Current Gain.
Low Saturation Voltage.
Complement to Type BD648F.
Minimum Lot-to-Lot variations for robust device
performance.
BD647F Applications
* Designed for use as complementary AF push-pull output
stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
8
A
ICP
📁 Related Datasheet
📌 All Tags