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BD645 Datasheet - INCHANGE

BD645 NPN Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) *High DC Current Gain : hFE= 750(Min) @IC= 3A *Low Saturation Voltage *Complement to Type BD646 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for use as co.

BD645-INCHANGE.pdf

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Datasheet Details

Part number:

BD645

Manufacturer:

INCHANGE

File Size:

188.75 KB

Description:

Npn transistor.

BD645 Distributor

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BD645 BD645 NPN Transistor INCHANGE