Datasheet Details
- Part number
- BD645
- Manufacturer
- INCHANGE
- File Size
- 188.75 KB
- Datasheet
- BD645-INCHANGE.pdf
- Description
- NPN Transistor
BD645 Description
isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min).
High DC Current Gain
: hFE= 750(Min) @IC= 3A.
Low Saturation Voltage.
Comp.
BD645 Applications
* Designed for use as complementary AF push-pull output
stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
8
A
ICP
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