BD643 NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor BD643 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 45V(Min). High DC Current Gain : hFE= 750(Min) @IC= 3A. Low Saturation Voltage. Comp.

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Datasheet Specifications

Part number: BD643
Manufacturer: INCHANGE
File Size: 190.50 KB
Datasheet: BD643-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 8 A ICP

BD643 Distributors

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NPN Transistor INCHANGE

INCHANGE BD643-like datasheet