Datasheet Details
- Part number
- BD643
- Manufacturer
- INCHANGE
- File Size
- 190.50 KB
- Datasheet
- BD643-INCHANGE.pdf
- Description
- NPN Transistor
BD643 Description
isc Silicon NPN Darlington Power Transistor BD643 .
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 45V(Min).
High DC Current Gain
: hFE= 750(Min) @IC= 3A.
Low Saturation Voltage.
Comp.
BD643 Applications
* Designed for use as complementary AF push-pull output
stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
45
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
8
A
ICP
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