BD646F PNP Transistor

INCHANGE

Description

isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor BD646F .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min). High DC Current Gain. Low Saturation Voltage. Complement to Type BD645F.

📥 Download Datasheet

BD646F Datasheet Preview — Preview of BD646F PDF

Datasheet Specifications

Part number: BD646F
Manufacturer: INCHANGE
File Size: 210.07 KB
Datasheet: BD646F-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A IC

BD646F Distributors

📁 Related Datasheet

BD646 BD640CS BD640CT BD6422EFV BD6423EFV BD6425

📌 All Tags

BD646F PNP Transistor INCHANGE

INCHANGE BD646F-like datasheet