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BD646F - PNP Transistor

BD646F Description

isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor BD646F .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min). High DC Current Gain. Low Saturation Voltage. Complement to Type BD645F.

BD646F Applications

* Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A IC

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Datasheet Details

Part number
BD646F
Manufacturer
INCHANGE
File Size
210.07 KB
Datasheet
BD646F-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE BD646F-like datasheet