Datasheet Details
- Part number
- BD646F
- Manufacturer
- INCHANGE
- File Size
- 210.07 KB
- Datasheet
- BD646F-INCHANGE.pdf
- Description
- PNP Transistor
BD646F Description
isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor BD646F .
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -60V(Min).
High DC Current Gain.
Low Saturation Voltage.
Complement to Type BD645F.
BD646F Applications
* Designed for use as complementary AF push-pull output
stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-60
V
VCEO
Collector-Emitter Voltage
-60
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-8
A
IC
📁 Related Datasheet
📌 All Tags