BD646F Datasheet - INCHANGE

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BD646F PNP Transistor

isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor BD646F .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min). High DC Current Gain. Low Saturation Voltage. Complement to Type BD645F.

BD646F-INCHANGE.pdf

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Datasheet Details

Part number:

BD646F

Manufacturer:

INCHANGE

File Size:

210.07 KB

Description:

PNP Transistor

Applications

* Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A IC

BD646F Distributors

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BD646F PNP Transistor INCHANGE

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