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BD648F - PNP Transistor

BD648F Description

isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor BD648F .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min). High DC Current Gain. Low Saturation Voltage. Complement to Type BD649F.

BD648F Applications

* Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A IC

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Datasheet Details

Part number
BD648F
Manufacturer
INCHANGE
File Size
210.76 KB
Datasheet
BD648F-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE BD648F-like datasheet

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