BD648F PNP Transistor

INCHANGE

Description

isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor BD648F .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min). High DC Current Gain. Low Saturation Voltage. Complement to Type BD649F.

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Datasheet Specifications

Part number: BD648F
Manufacturer: INCHANGE
File Size: 210.76 KB
Datasheet: BD648F-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A IC

BD648F Distributors

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BD648F PNP Transistor INCHANGE

INCHANGE BD648F-like datasheet