D689 Datasheet | Specifications & PDF Download

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain: hFE = 1000(Min)@ IC=

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www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.k

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SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON POWER) LOW FREQUENCY MEDIUM POWER AMPLIFIER AND INDUSTRIAL APPLICATIONS Unit in mm MEDIUM SPEE

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Fast Recovery Diodes (FRD) MA3D689 Silicon planar type Unit : mm For high-frequency rectification I Features • Low forward rise voltage VF • Fast re

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 1A ·Collector-Emitter Sustaining Voltage- : VCE

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