2SD689 Silicon NPN Darlington Power Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor .
High DC Current Gain- : hFE = 1000(Min)@ IC= 1A. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min). Low Collector-Emitter Sat.

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Datasheet Specifications

Part number: 2SD689
Manufacturer: INCHANGE
File Size: 212.34 KB
Datasheet: 2SD689-INCHANGE.pdf
Description: Silicon NPN Darlington Power Transistor

Applications

* Low frequency medium power amplifier and medium speed switching applications.
* Pulse motor driver, relay drive and hammer drive applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEB

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2SD689 Silicon NPN Darlington Power Transistor INCHANGE

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