2SD688 Silicon NPN Transistor

Toshiba

Description

: SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON POWER) LOW FREQUENCY MEDIUM POWER AMPLIFIER AND MEDIUM SPEED SWITCHING APPLICATIONS.PULSE MO.

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Datasheet Specifications

Part number: 2SD688
Manufacturer: Toshiba ↗
File Size: 40.95 KB
Datasheet: 2SD688-Toshiba.pdf
Description: Silicon NPN Transistor

Features

* High DC Current Gain : h FE=1000 (Min. ) (VCE=2V, I C=1A)
* Low Saturation Voltage : vCE(sat)=l-5V (Max. ) (I C=1A)
* Complementary to 2SB678 Unit in mm .09.39MAX. j2fe.45MAX. j2fo.45 a 05.08 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector

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2SD688 Silicon NPN Transistor Toshiba

Toshiba 2SD688-like datasheet