2SD688 Datasheet - Toshiba

2SD688 Silicon NPN Transistor

2SD688 Features

* High DC Current Gain : h FE=1000 (Min.) (VCE=2V, I C=1A)

* Low Saturation Voltage : vCE(sat)=l-5V (Max.) (I C=1A)

* Complementary to 2SB678 Unit in mm .09.39MAX. j2fe.45MAX. j2fo.45 a 05.08 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector

Datasheet Details

2SD688

40.95 KB

Silicon npn transistor.

📁 Related Datasheet

2SD683 NPN Transistor (INCHANGE)

2SD683 Silicon NPN Transistor (Toshiba)

2SD683A Silicon NPN Transistor (Toshiba)

2SD684 NPN Transistor (Toshiba)

2SD684 NPN Transistor (INCHANGE)

2SD684A NPN Transistor (Toshiba)

2SD685 NPN Transistor (Toshiba)

2SD686 NPN Transistor (Toshiba)

TAGS

2SD688 Silicon NPN Transistor Toshiba

2SD688 Distributor