2SD687 NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor .
High DC Current Gain- : hFE = 2000(Min)@ IC= 1A. Collector-Emitter Breakdown Voltage- : V(BR)CEO = 40V(Min). Low Collector-Emitter Satura.

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Datasheet Specifications

Part number: 2SD687
Manufacturer: INCHANGE
File Size: 205.87 KB
Datasheet: 2SD687-INCHANGE.pdf
Description: NPN Transistor

Applications

* Switching applications.
* Hammer drive, pulse motor drive applications.
* Power amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Co

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2SD687 NPN Transistor INCHANGE

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