Datasheet4U Logo Datasheet4U.com

2SD687 NPN Transistor

📥 Download Datasheet Datasheet Preview Page 1

Description

isc Silicon NPN Darlington Power Transistor .
High DC Current Gain- : hFE = 2000(Min)@ IC= 1A. Collector-Emitter Breakdown Voltage- : V(BR)CEO = 40V(Min). Low Collector-Emitter Satura.

📥 Download Datasheet

Preview of 2SD687 PDF
datasheet Preview Page 2

Datasheet Specifications

Part number
2SD687
Manufacturer
INCHANGE
File Size
205.87 KB
Datasheet
2SD687-INCHANGE.pdf
Description
NPN Transistor

Applications

* Switching applications.
* Hammer drive, pulse motor drive applications.
* Power amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Co

2SD687 Distributors

📁 Related Datasheet

  • 2SD683A - Silicon NPN Transistor (Toshiba)
  • 2SD684 - NPN Transistor (Toshiba)
  • 2SD684A - NPN Transistor (Toshiba)
  • 2SD685 - NPN Transistor (Toshiba)
  • 2SD686 - NPN Transistor (Toshiba)
  • 2SD688 - Silicon NPN Transistor (Toshiba)

📌 All Tags

NPN Transistor INCHANGE
INCHANGE 2SD687-like datasheet