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2SD686 NPN Transistor

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Description

:) SILICON NPN EPITAXIAL TYPE (PCT PROCESS) SWITCHING APPLICATIONS.HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS.POWER AMPLIFIER APPLICATIONS.FEATU.

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Features

* High DC Current Gain : hpE=2000 (Min. (Vce=2V,Ic=1A)
* Complementary to 2SB676. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Collector Power Dissipation ffc=25°C) Junction Temperature St

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NPN Transistor Toshiba
Toshiba 2SD686-like datasheet