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2SD685 Datasheet - Toshiba

2SD685 NPN Transistor

2SD685 Features

* : . High DC Current Gain : hFE =400 (Min.)(VCE =2V, I C=4A) . High Reverse Energy : Es/g=245mJ (Min.) . Monolithic Construction With Built-in Base-Emitter Shunt Resistor. INDUSTRIAL APPLICATIONS Unit in mm 025.OMAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter

2SD685 Datasheet (124.00 KB)

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Datasheet Details

Part number:

2SD685

Manufacturer:

Toshiba ↗

File Size:

124.00 KB

Description:

Npn transistor.

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2SD685 NPN Transistor Toshiba

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