Part number:
2SD689
Manufacturer:
File Size:
44.29 KB
Description:
Npn transistor.
SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON POWER) LOW FREQUENCY MEDIUM POWER AMPLIFIER AND INDUSTRIAL APPLICATIONS Unit in mm MEDIUM SPEE.
* . High DC Current Gain : h FE =1000 (Min. ) (VCE =2V, I C =1A) . Low Saturation Voltage : VcE(sat) = l .5V(Max. ) (Ic=lA) . Complementary to 2SB679. x.T 1.5MAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Curr
2SD689
44.29 KB
Npn transistor.
SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON POWER) LOW FREQUENCY MEDIUM POWER AMPLIFIER AND INDUSTRIAL APPLICATIONS Unit in mm MEDIUM SPEE.
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