Datasheet Specifications
- Part number
- 2SD689
- Manufacturer
- Toshiba ↗
- File Size
- 44.29 KB
- Datasheet
- 2SD689-Toshiba.pdf
- Description
- NPN Transistor
Description
SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (DARLINGTON POWER) LOW FREQUENCY MEDIUM POWER AMPLIFIER AND INDUSTRIAL APPLICATIONS Unit in mm MEDIUM SPEE.
Features
* . High DC Current Gain : h FE =1000 (Min. ) (VCE =2V, I C =1A) . Low Saturation Voltage : VcE(sat) = l .5V(Max. ) (Ic=lA) . Complementary to 2SB679. x. T 1.5MAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector CurrApplications
* Unit in mm MEDIUM SPEED SWITCHING APPLICATIONS. PULSE MOTOR DRIVE, RELAY DRIVE AND HAMMER DRIVE APPLICATIONS. 10.3MAX, (2fe-6±0.2 >2SD689 Distributors
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