D823 Datasheet | Specifications & PDF Download

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD823 DESCRIPTION ·Collector Current: IC= 6A ·Collector-Emitter B

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Data Sheet FEATURES Single-supply operation Output swings rail-to-rail Input voltage range extends below ground Single-supply capability from 3 V to 3

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Data Sheet Single-Lead, Heart Rate Monitor Front End AD8232 FEATURES Fully integrated single-lead ECG front end Low supply current: 170 µA (typical)

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16 V Rail-to-Rail, Zero-Drift, Precision Instrumentation Amplifier AD8230 FEATURES Resistor programmable gain range: 101 to 1000 Supply voltage range

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Data Sheet 40 μA Micropower Instrumentation Amplifier in WLCSP Package AD8235 FEATURES Low power 40 μA maximum supply current 6 nA shutdown current

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40 μA Micropower Instrumentation Amplifier with Zero Crossover Distortion AD8236 FEATURES Low power: 40 μA supply current (maximum) Low input currents

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Data Sheet FEATURES Wide Supply Dual, 17 MHz, Rail-to-Rail FET Input Amplifier AD823A CONNECTION DIAGRAM OUT1 1 –IN1 2 +IN1 3 –VS 4 8 7 6 5 Single-s

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Data Sheet 50 µA, 2 mm × 1.7 mm WLCSP, Low Noise, Heart Rate Monitor for Wearable Products AD8233 FEATURES Fully integrated, single-lead ECG front e

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CD821 thru CD829A TC Zener Diode Chip Series Features  Monolithic Temperature Compensated Zener Reference Chips  Electrically Equivalent to 1N821 -

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• 1N821 THRU 1N829 AVAILABLE IN JANHC AND JANKC PER MIL-PRF-19500/159 • MONOLITHIC TEMPERATURE COMPENSATED ZENER REFERENCE CHIPS • ALL JUNCTIONS COMPL

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CD821 thru CD829A TC Zener Diode Chip Series Features  Monolithic Temperature Compensated Zener Reference Chips  Electrically Equivalent to 1N821 -

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Data Sheet AD8231 Zero Drift, Digitally Programmable Instrumentation Amplifier FEATURES ► Digitally/pin-programmable gain ► G = 1, 2, 4, 8, 16, 32, 6

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Data Sheet Micropower, Zero Drift, True Rail-to-Rail Instrumentation Amplifier AD8237 FEATURES Gain set with 2 external resistors Can achieve low ga

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Data Sheet FEATURES Digitally/pin-programmable gain G = 1, 2, 4, 8, 16, 32, 64, or 128 Specified from −55°C to +125°C 50 nV/°C maximum input offset dr

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THC63LVD823_Rev2.0 THC63LVD823 Single(135MHz)/Dual(170MHz) Link LVDS Transmitter for SXGA/SXGA+/UXGA General Description The THC63LVD823 transmitter

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector Current: IC= 6A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 90V(Min.) ·Minimum Lot-to-L

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