D850N Datasheet | Specifications & PDF Download

N Datenblatt / Data sheet Netz-Gleichrichterdiode Rectifier Diode D850N Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte /

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FDD850N10L — N-Channel PowerTrench® MOSFET FDD850N10L N-Channel PowerTrench® MOSFET 100 V, 15.7 A, 75 mΩ November 2013 Features • RDS(on) = 61 mΩ (

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤850mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to

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FCD850N80Z / FCU850N80Z — N-Channel SuperFET® II MOSFET October 2014 FCD850N80Z / FCU850N80Z N-Channel SuperFET® II MOSFET 800 V, 6 A, 850 m Featu

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FDD850N10LD — BoostPak (N-Channel PowerTrench® MOSFET + Diode) November 2013 FDD850N10LD BoostPak (N-Channel PowerTrench® MOSFET + Diode) 100 V, 15.3

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SKJF(H&D)850N65 SJMOS N-MOSFET 650V, 0.73Ω, 5A Features • Skysilicon Super_Junction Gen1 technology • Much lower Ron*A performance for On-state effic

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YANGZHOU POSITIONING TECH. CO., LTD Standard Rectifier------PST-D850N GENERAL PURPOSE HIGH POWER STANDARD RECTIFIER Features: . All Diffused Structure

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() CRJD850N65GC SJMOS N-MOSFET 650V, 0.73Ω, 5A Features • CRM(CQ) Super_Junction technology • Much lower Ron*A performance for On-state efficiency •

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