| Part Number | Description | Manufacture |
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Self-Supplied Monolithic Switcher • Built−in 700 V MOSFET with Typical RDSon of 11 W and 22 W • Large Creepage Distance Between High−Voltage Pins • Current−Mode Fixed Frequency Operation: 65 kHz – 100 kHz − 130 kHz • Skip−Cycle Operation at Low Peak Currents Only: No Acoustic Noise! |
 ON Semiconductor |
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Transistor |
 ETC |
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NPN General Purpose Transistors t Gain www.DataSheet4U.com (IC= 1mAdc, VCE=5Vdc) HFE VCE(sat) 60 1000 - Collector-Emitter Saturation Voltage (IC= 100 mAdc, IB= 5 mAdc) Base-Emitter Saturation Voltage (IC= 100 mAdc, IB= 5 mAdc) Transition Frequency (IC= 10 mAdc, VCE= 5 Vdc, f=3 |
 Weitron Technology |
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NPN SILICON TRANSISTOR Power dissipation PCM : 0.4 W Tamb=25 Collector current A ICM : 0.1 Collector-base voltage V V(BR)CBO : 50 1.EMITTER 2.BASE 3.COLLECTOR 1 2 3 ELECTRICAL CHARACTERISTICS Parameter Collector-base breakdown voltage Collector-emitter breakdown voltag |
 Wing Shing Computer Components |
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Self-Supplied Monolithic Switcher • Built−in 700 V MOSFET with Typical RDSon of 11 W and 22 W • Large Creepage Distance Between High−Voltage Pins • Current−Mode Fixed Frequency Operation: 65 kHz – 100 kHz − 130 kHz • Skip−Cycle Operation at Low Peak Currents Only: No Acoustic Noise! |
ON Semiconductor |
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MOSFET •Optimizedforsynchronousrectification •Verylowon-stateresistanceRDS(on) •100%avalanchetested •Superiorthermalresistance •N-channel,logiclevel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScom |
 Infineon |
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High-Side Reverse Bias / Reverse Polarity Protector • Up to −30 V Reverse−Bias Protection • Nano Seconds of Reverse−Bias Blocking Response Time • +32 V 24−Hour “Withstand” Rating • 14 mW Typical Series Resistance at 5 V • Integrated TVS Over Voltage Suppression • MLP 3.3 x 3.3 Package Size • USB Teste |
ON Semiconductor |
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NPN Silicon Transistor *High total power dissipation. (450mW) *Excellent hFE linearity. *Complementary to UTC 9015 1 TO-92 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETER Collector-base voltage Collector-emitt |
 UTC |
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General Purpose Relays cosφ=1, 85°C PE014/PE015 C (CO) 5A, 250VAC, cosφ=1, 85°C PE014 A (NO) 5A, 30VDC, 0ms, 85°C PE015 A (NO) 1,5A, 30VDC, 900/h, 50% DF PE034 UL 508 A (NO) 6A, 250VAC, cosφ=1, 70°C PE013 C (CO) 5A, 240VAC, resistive, 8 |
 TE |
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NPN Silicon Transistors • TO-92 Plastic-Encapsulate Transistors • Capable of 0.4Watts(Tamb=25OC) of Power Dissipation. • Collector-current 0.1A • Collector-base Voltage 50V • Operating and storage junction temperature range: -55OC to +150OC • Marking : S9014 • Lead Free Fin |
 MCC |
| Total 1832 results |
