DE-9S-N Datasheet | Specifications & PDF Download

2CZ20100 A8S ， 。 、 、。 N 2CZ20100 A9S ○R ●150℃ ● ● ● ● VRRM IF（AV） VF（MAX） 100 2×10 0.85 V A V -10℃～40℃ 1 ＜85％ 265℃ （Per

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http://www.ncepower.com Pb Free Product NCE30ND09S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30ND09S uses advanced trench techn

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Notice: Some parametric limits are subject to change MITSUBISHI LASER DIODES ML9xx19 SERIES 2.5Gbps InGaAsP DFB LASER DIODE TYPE NAME ML925B19F / M

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1. Absolute Maximum Ratings 1-1. Input Output Ratings Item Vin Vin input voltage フローティングドライバ High side floating supply voltage Vc1 input voltage ハイ

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FM25XX (：S&CIC1919) FM25XX （PSR）， MOSFET ， 。FM25XX ， PFM+PWM 。FM25XX ， 。 FM25XX ，VCC ，VCC ，。FM25XX DIP/SOP ，。  MOSFET   PFM+PWM  75

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1PS79SB30-Q 40 V, 0.2 A Schottky barrier diode 11 May 2022 Product data sheet 1. General description Planar Schottky barrier diode with an integrate

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FMP60N079S2HF http://www.fujielectric.com/products/semiconductor/ FUJI POWER MOSFET Super J MOS® S2 series N-Channel enhancement mode power MOSFET

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ADVANCED INFORMATION Product Summary BVDSS 30V RDS(ON) max 5.5mΩ @ VGS = 10V 9.0mΩ @ VGS = 4.5V ID max TC = +25°C 80A 60A DMN3009SK3 Green 30V N-

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http://www.ncepower.com Pb Free Product NCE4009S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE4009S uses advanced trench technolog

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MITSUBISHI LASER DIODES ML7xx19 SERIES Notice: Some parametric limits are subject to change. 1310nm InGaAsP FP LASER DIODES TYPE NAME DESCRIPTION M

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DISCONTINUED 08/06/2009 1N5391/S - 1N5399/S 1.5A RECTIFIER Features • Fast Switching for High Efficiency • High Current Capability and Low Forward Vo

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GOFO TEL 0755-8398 3377 135 9011 2223 http://www.gofotech.com AM9569S P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Fast Swi

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Production specification Surface Mount Fast Switching Diodes FEATURES  High switching speed.  For general purpose switching application. Pb Lead-

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DISCRETE SEMICONDUCTORS DATA SHEET M3D319 1PS79SB62 Schottky barrier diode Product specification 2001 Jan 18 Philips Semiconductors Product specifi

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JESD204B Compliant Fanout Buffer and Divider 8V79S680 Datasheet Description The 8V79S680 is a fully integrated, clock and SYSREF signal fanout buffe

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DOCUMENT NUMBER 9S12DT128DGV2/D MC9S12DT128 Device User Guide V02.09 Covers also MC9S12DT128E, MC9S12DG128E, MC9S12DJ128E, MC9S12DG128, MC9S12DJ128,

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HIGH-SPEED 64K x 8 SYNCHRONOUS DUAL-PORT STATIC RAM PRELIMINARY IDT709089S/L Features: x True Dual-Ported memory cells which allow simultaneous acce

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Document 481-1 Shielded Power Inductors – SLC7649 L DCR SRF  ±10%2   ±5%3 typ4  Isat5  Irms6  Part number1 (nH) (mOhms) (MHz) (A)

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