DEPLETION-MODE Datasheet | Specifications & PDF Download

N-Channel Depletion Mode Lateral DMOS FET CORPORATION SD2100 / SST2100 FEATURES DESCRIPTION The SD2100/SST2100 is a depletion mode DMOS lateral FET t

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2N5265 thru (SILICON) 2N5270 P-Channel junction depletion mode (Type A) fieldeffect transistors designed for general-purpose amplifier applications.

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DMZ0615E Ultrahigh Threshold Voltage Depletion-Mode Power MOSFET General Features  ESD improved Capability  Depletion Mode (Normally On)  Proprie

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ND2406 SERIES N-Channel Depletion-Mode MOS Transistors PRODUCT SUMMARY PART V(BR)OSV rOS(ON) 10 NUMBER (V) (0) (A) PACKAGE ND2406L 240 6 0.23

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ND2020 SERIES N-Channel Depletion-Mode MOS Transistors PRODUCT SUMMARY PART V(BR)OSV rOS(ON) 10 NUMBER (V) (il) (A) PACKAGE ND2020L 200 20 0.1

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N-Channel Depletion-Mode 4-Channel DMOS FET Array CORPORATION SD5501 FEATURES DESCRIPTION The SD5501 is manufactured utilizing Calogic’s proprietary

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Supertex inc. N-Channel Depletion-Mode Vertical DMOS FETs DN3535 Features ►► High input impedance ►► Low input capacitance ►► Fast switching speeds

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Supertex inc. DN3545 N-Channel Depletion-Mode Vertical DMOS FET Features ►► High input impedance ►► Low input capacitance ►► Fast switching speeds

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www.DataSheet4U.com ND2406L/2410L, BSS129 N-Channel Depletion-Mode MOSFET Transistors Product Summary Part Number ND2406L ND2410L BSS129 230 V(BR)DS

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ADVANCED LINEAR DEVICES, INC. e TM EPAD ENA ® B L E D ALD114813/ALD114913 QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD® PRECISION MATCHED PAIR MOSF

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ADVANCED LINEAR DEVICES, INC. e TM EPAD ENA ® B L E D ALD114813/ALD114913 QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD® PRECISION MATCHED PAIR MOSF

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Preliminary Technical Information Depletion Mode MOSFET IXTH16N20D2 IXTT16N20D2 VDSX ID(on) RDS(on) = > ≤ 200V 16A 73mΩ N-Channel TO-247 (IXTH)

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Preliminary Technical Information Depletion Mode MOSFET IXTH16N20D2 IXTT16N20D2 VDSX ID(on) RDS(on) = > ≤ 200V 16A 73mΩ N-Channel TO-247 (IXTH)

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UNISONIC TECHNOLOGIES CO., LTD UF601Q 0.185A, 600V N-CHANNEL DEPLETION-MODE POWER MOSFET  DESCRIPTION The UTC UF601Q is a N-channel power MOSFET usin

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– OBSOLETE – N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information BVDSX / BVDGX 240V RDS(ON) (max) 4.0Ω IDSS (min) 600mA Order Number

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– OBSOLETE – DN2640 Preliminary N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information BVDSX / BVDGX 400V RDS(ON) (max) 6.0Ω IDSS (min)

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JMDL501A Description JMD N-channel Depletion Mode Power MOSFET Features  600V, 0.03A RDS(ON)< 700Ω @ VGS =0V RDS(ON)< 800Ω @ VGS =10V  Self-align

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~Siliconix ~ im::orporated VDDQ20 N-Channel Depletion-Mode MOSFET DESIGNED FOR: o Switching • Amplification FEATURES • High Breakdown Voltage> 200

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..rSiliconix ~ incorporated VDDV24 N-Channel Depletion-Mode MOSFET DESIGNED FOR: • Switching • Amplification FEATURES • High Breakdown> 240 V • Low

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