IXTT10N100D2, IXTH10N100D2 Datasheet - IXYS

IXTT10N100D2 - Depletion Mode MOSFET

Depletion Mode MOSFET N-Channel Preliminary Technical Information IXTH10N100D2 IXTT10N100D2 VDSX = ID(on) >  RDS(on) D 1000V 10A 1.5 G S TO-247 (IXTH) G DS D (Tab) Symbol VDSX VDGX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-247) TO-247 TO-268 Maximum Ratings 1000 V 1000 V 20 V 30 V .

IXTT10N100D2 Features

* Normally ON Mode

*  International Standard Packages

* Molding Epoxies Meet UL 94 V-0 Flammability Classification Advantages

* Easy to Mount

* Space Savings

* High Power Density Applications

* Audio Amplifiers

* Start-up Circuits

IXTH10N100D2-IXYS.pdf