IXTT28N50Q, IXTH28N50Q Datasheet - International Rectifier

IXTT28N50Q Power MOSFET

www.DataSheet4U.com Advanced Technical Information Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt IXTH 28N50Q IXTT 28N50Q VDSS = 500 V = 28 A ID25 RDS(on) = 0.20 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG =.

IXTT28N50Q Features

* z z 1.13/10 Nm/lb.in. 6 4 g g IXYS advanced low Qg process Low gate charge and capacitances - easier to drive - faster switching International standard packages Low RDS (on) z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2.5 4.5 ± 100

IXTH28N50Q_InternationalRectifier.pdf