* z z 1.13/10 Nm/lb.in. 6 4 g g IXYS advanced low Qg process Low gate charge and capacitances - easier to drive - faster switching International standard packages Low RDS (on) z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2.5 4.5 ± 100
IXTT28N50Q Datasheet (199.65 KB)
IXTT28N50Q
International Rectifier
199.65 KB
Power mosfet.
www.DataSheet4U.com
Advanced Technical Information
Power MOSFETs Q-Class
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
IXTH 28N50Q.
📁 Related Datasheet
IXTT20N50D High Voltage MOSFET (IXYS)
IXTT20P50P Power MOSFET (IXYS)
IXTT240N15X4HV Power MOSFET (IXYS)
IXTT24P20 Standard Power MOSFET (IXYS)
IXTT26N50P Power MOSFET (IXYS)
IXTT26N60P N-Channel Power MOSFET (IXYS)
IXTT2N170D2 N-Channel MOSFET (IXYS)
IXTT02N450HV High Voltage Power MOSFET (IXYS)
IXTT100N25P N-Channel MOSFET (IXYS Corporation)
IXTT10N100D2 Depletion Mode MOSFET (IXYS)
