IXTT28N50Q
International Rectifier
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Power mosfet.
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📁 Related Datasheet
IXTT20N50D - High Voltage MOSFET
(IXYS)
High Voltage MOSFET
N-Channel, Depletion Mode
IXTH20N50D IXTT20N50D
VDSX = ID25 = ≤RDS(on)
500V 20A 330mΩ
TO-268 (IXTT)
Symbol
VDSX VDGX
VGSX VGS.
IXTT20P50P - Power MOSFET
(IXYS)
PolarPTM Power MOSFET
P-Channel Enhancement Mode Avalanche Rated
IXTT20P50P IXTH20P50P
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dv/dt
PD
TJ TJM Ts.
IXTT240N15X4HV - Power MOSFET
(IXYS)
X4-Class Power MOSFETTM
Advance Technical Information
IXTT240N15X4HV IXTH240N15X4
VDSS = ID25 = RDS(on)
150V 240A 4.4m
N-Channel Enhancement Mo.
IXTT24P20 - Standard Power MOSFET
(IXYS)
Standard Power MOSFET
P-Channel Enhancement Mode Avalanche Rated
IXTH 24P20 IXTT 24P20
VDSS = - 200 V ID25 = - 24 A ≤RDS(on) 0.15 Ω
Symbol VDSS VDG.
IXTT26N50P - Power MOSFET
(IXYS)
PolarHVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTQ 26N50P IXTT 26N50P IXTV 26N50P IXTV 26N50PS
VDSS =
ID25 = ≤ RDS(on)
500 V 26.
IXTT26N60P - N-Channel Power MOSFET
(IXYS)
PolarHVTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTH26N60P IXTQ26N60P IXTT26N60P IXTV26N60P IXTV26N60PS
VDSS = 600 V ID25 = 26 A R.
IXTT2N170D2 - N-Channel MOSFET
(IXYS)
Depletion Mode MOSFET
N-Channel
IXTT2N170D2 IXTH2N170D2
Symbol
VDSX VDGX
VGSX VGSM
PD
TJ TJM Tstg
TL TSOLD
Md
Weight
Test Conditions TJ = 25C to 1.
IXTT02N450HV - High Voltage Power MOSFET
(IXYS)
High Voltage Power MOSFET
IXTT02N450HV IXTH02N450HV
VDSS I
D25
RDS(on)
= 4500V = 200mA 625
N-Channel Enhancement Mode
Symbol
VDSS VDGR
VGSS V.
IXTT100N25P - N-Channel MOSFET
(IXYS Corporation)
PolarHTTM Power MOSFET
IXTK 100N25P IXTQ 100N25P IXTT 100N25P
N-Channel Enhancement Mode Avalanche Rated
V= DSS
ID25 = ≤ RDS(on)
250 V 100 A 27 mΩ.
IXTT10N100D2 - Depletion Mode MOSFET
(IXYS)
Depletion Mode MOSFET
N-Channel
Preliminary Technical Information
IXTH10N100D2 IXTT10N100D2
VDSX = ID(on) >
RDS(on)
D
1000V 10A
1.5
G S
TO-2.
