IXTH28N50Q_InternationalRectifier.pdf
Datasheet Details
Part number:
IXTT28N50Q, IXTH28N50Q
Manufacturer:
International Rectifier
File Size:
199.65 KB
Description:
Power mosfet.
Note:
This datasheet PDF includes multiple part numbers: IXTT28N50Q, IXTH28N50Q.
Please refer to the document for exact specifications by model.
IXTT28N50Q, IXTH28N50Q, Power MOSFET
www.DataSheet4U.com Advanced Technical Information Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt IXTH 28N50Q IXTT 28N50Q VDSS = 500 V = 28 A ID25 RDS(on) = 0.20 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG =
IXTT28N50Q Features
* z z 1.13/10 Nm/lb.in. 6 4 g g IXYS advanced low Qg process Low gate charge and capacitances - easier to drive - faster switching International standard packages Low RDS (on) z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2.5 4.5 ± 100
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