IXTT20P50P Datasheet (IXYS)

IXTT20P50P, Power MOSFET

PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTT20P50P IXTH20P50P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-247) TO-268 TO-247 Maximum Ratings

IXTT20P50P Features

* International Standard Packages

* Avalanche Rated

* Rugged PolarPTM Process

* Low Package Inductance

* Fast Intrinsic Diode Advantages

* Easy to Mount

* Space Savings

* High Power Density Applications

* High-Side Switches

* Push Pull Amplifiers

* DC Chop