Datasheet Details
Part number:
IXTT1N100, IXTH1N100
Manufacturer:
IXYS Corporation
File Size:
71.28 KB
Description:
High-voltage mosfet.
Note:
This datasheet PDF includes multiple part numbers: IXTT1N100, IXTH1N100.
Please refer to the document for exact specifications by model.
IXTT1N100, IXTH1N100, High-Voltage MOSFET
Advance Technical Information High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTH 1N100 IXTT 1N100 V DSS ID25 RDS(on) = 1000 V = 1.5 A = 11 Ω Symbol Test Conditions V DSS VDGR VGS VGSM ID25 I DM T J = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C T C = 25°C, pulse width limited by T JM IAR EAR EAS dv/dt PD T J TJM T stg Md Weight TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 18 Ω TC = 25°C
IXTT1N100 Features
* International standard packages High voltage, Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Fast switching times Applications Switch-mode and resonant-mode power supplies Flyback inverters DC choppers High frequency matching Advantages Space savings High pow
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