IXTT1N100, IXTH1N100 Datasheet - IXYS Corporation

IXTT1N100 High-Voltage MOSFET

Advance Technical Information High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTH 1N100 IXTT 1N100 V DSS ID25 RDS(on) = 1000 V = 1.5 A = 11 Ω Symbol Test Conditions V DSS VDGR VGS VGSM ID25 I DM T J = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C T C = 25°C, pulse width limited by T JM IAR EAR EAS dv/dt PD T J TJM T stg Md Weight TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 18 Ω TC = 25°C .

IXTT1N100 Features

* International standard packages High voltage, Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Fast switching times Applications Switch-mode and resonant-mode power supplies Flyback inverters DC choppers High frequency matching Advantages Space savings High pow

IXTH1N100_IXYSCorporation.pdf

IXTT1N100 Datasheet Preview — This datasheet PDF includes multiple part numbers: IXTT1N100, IXTH1N100. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IXTT1N100, IXTH1N100

Manufacturer:

IXYS Corporation

File Size:

71.28 KB

Description:

High-voltage mosfet.

Note:

This datasheet PDF includes multiple part numbers: IXTT1N100, IXTH1N100.
Please refer to the document for exact specifications by model.

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IXTT1N100 IXTH1N100 High-Voltage MOSFET IXYS Corporation

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