IXTT1N300P3HV Datasheet - IXYS

IXTT1N300P3HV High Voltage Power MOSFET

High Voltage Power MOSFET Preliminary Technical Information IXTT1N300P3HV IXTH1N300P3HV VDSS I D25 RDS(on) = 3000V = 1.00A  50 N-Channel Enhancement Mode TO-268HV (IXTT) Symbol VDSS VDGR VGSS VGSM ID25 ID110 IDM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 110C TC = 25C, Pulse Width Limited by TJM TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torq.

IXTT1N300P3HV Features

* High Blocking Voltage

* High Voltage Packages Advantages

* Easy to Mount

* Space Savings

* High Power Density Applications

* High Voltage Power Supplies

* Capacitor Discharge Applications

* Pulse Circuits

IXTT1N300P3HV-IXYS.pdf

IXTT1N300P3HV Datasheet Preview — Preview of IXTT1N300P3HV PDF

Datasheet Details

Part number:

IXTT1N300P3HV

Manufacturer:

IXYS

File Size:

216.10 KB

Description:

High voltage power mosfet.

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IXTT1N300P3HV IXTT1N300P3HV High Voltage Power MOSFET IXYS

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