IXTT1N300P3HV High Voltage Power MOSFET

IXYS

Description

High Voltage Power MOSFET Preliminary Technical Information IXTT1N300P3HV IXTH1N300P3HV VDSS I D25 RDS(on) = 3000V = 1.00A  50 N-Channel Enhan.

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Datasheet Specifications

Part number: IXTT1N300P3HV
Manufacturer: IXYS
File Size: 216.10 KB
Datasheet: IXTT1N300P3HV-IXYS.pdf
Description: High Voltage Power MOSFET

Features

* High Blocking Voltage
* High Voltage Packages Advantages
* Easy to Mount
* Space Savings

Applications

* High Voltage Power Supplies
* Capacitor Discharge Applications
* Pulse Circuits
* Laser and X-Ray Generation Systems © 2014 IXYS CORPORATION, All Rights Reserved DS100590A(6/14) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 50V, ID = 0.5A, Note 1

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IXTT1N300P3HV High Voltage Power MOSFET IXYS

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