IXTT1N450HV High Voltage Power MOSFET

IXYS

Description

High Voltage Power MOSFET IXTT1N450HV IXTH1N450HV VDSS I D25 RDS(on) = 4500V = 1A  80 N-Channel Enhancement Mode Symbol VDSS VDGR VGSS VGSM ID.

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Datasheet Specifications

Part number: IXTT1N450HV
Manufacturer: IXYS
File Size: 214.11 KB
Datasheet: IXTT1N450HV_IXYS.pdf
Description: High Voltage Power MOSFET

Features

* High Blocking Voltage
* High Voltage Package Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VGS(th) VDS = VGS, ID = 250A IGSS VGS = 20V, VDS = 0V IDSS VDS = 3.6kV, VGS = 0V VDS = 4.5kV VDS = 3.6kV TJ = 100C RDS(on) VGS = 10V, ID = 50mA, Note 1 Characterist

Applications

* High Voltage Power Supplies
* Capacitor Discharge Applications
* Pulse Circuits
* Laser and X-Ray Generation Systems © 2014 IXYS CORPORATION, All Rights Reserved DS100500D(04/14) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 50V, ID = 200mA, Note 1

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IXTT1N450HV High Voltage Power MOSFET IXYS

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