IXTT1N450HV Datasheet - IXYS

IXTT1N450HV, High Voltage Power MOSFET

High Voltage Power MOSFET IXTT1N450HV IXTH1N450HV VDSS I D25 RDS(on) = 4500V = 1A  80 N-Channel Enhancement Mode Symbol VDSS VDGR VGSS VGSM ID.

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IXTT1N450HV_IXYS.pdf

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Datasheet Details

Part number:

IXTT1N450HV

Manufacturer:

IXYS

File Size:

214.11 KB

Description:

High Voltage Power MOSFET

Features

* High Blocking Voltage
* High Voltage Package Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VGS(th) VDS = VGS, ID = 250A IGSS VGS = 20V, VDS = 0V IDSS VDS = 3.6kV, VGS = 0V VDS = 4.5kV VDS = 3.6kV TJ = 100C RDS(on) VGS = 10V, ID = 50mA, Note 1 Characterist

Applications

* High Voltage Power Supplies
* Capacitor Discharge Applications
* Pulse Circuits
* Laser and X-Ray Generation Systems © 2014 IXYS CORPORATION, All Rights Reserved DS100500D(04/14) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 50V, ID = 200mA, Note 1

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IXTT1N450HV High Voltage Power MOSFET IXYS

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