* z High Blocking Voltage z High Voltage Package z Fast Intrinsic Diode z Low Package Inductance Advantages z Easy to Mount z Space Savings z High Power Density Applications z High Voltage Power Supplies z Capacitor Discharge z Pulse Circuits © 2012 IXYS CORPORATION, All Rights Reserved DS100521(12/
IXTT1N250HV Datasheet (162.81 KB)
IXTT1N250HV
IXYS
162.81 KB
High voltage power mosfet.
High Voltage Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Advance Technical Information IXTT1N250HV VDSS = ID25 = RDS(on) ≤ 2500V .
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