IXTT1N250HV High Voltage Power MOSFET

IXYS

Description

High Voltage Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Advance Technical Information IXTT1N250HV VDSS = ID25 = RDS(on) ≤ 2500V .

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Datasheet Specifications

Part number: IXTT1N250HV
Manufacturer: IXYS
File Size: 162.81 KB
Datasheet: IXTT1N250HV-IXYS.pdf
Description: High Voltage Power MOSFET

Applications

* z High Voltage Power Supplies z Capacitor Discharge z Pulse Circuits © 2012 IXYS CORPORATION, All Rights Reserved DS100521(12/12) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs VDS = 50V, ID = 0.5A, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz td(on) tr td(off) t

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High Voltage Power MOSFET IXYS

IXYS IXTT1N250HV-like datasheet