IXTT1N250HV Datasheet - IXYS

IXTT1N250HV, High Voltage Power MOSFET

High Voltage Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Advance Technical Information IXTT1N250HV VDSS = ID25 = RDS(on) ≤ 2500V .

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Datasheet Details

Part number:

IXTT1N250HV

Manufacturer:

IXYS

File Size:

162.81 KB

Description:

High Voltage Power MOSFET

Applications

* z High Voltage Power Supplies z Capacitor Discharge z Pulse Circuits © 2012 IXYS CORPORATION, All Rights Reserved DS100521(12/12) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs VDS = 50V, ID = 0.5A, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz td(on) tr td(off) t

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IXTT1N250HV High Voltage Power MOSFET IXYS

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