IXTT1N250HV Datasheet - IXYS

IXTT1N250HV High Voltage Power MOSFET

High Voltage Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Advance Technical Information IXTT1N250HV VDSS = ID25 = RDS(on) ≤ 2500V 1.5A 40Ω TO-268S Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C 1.6mm (0.062 in.) From Case for 10s Plastic Body for 10s Maximum Ratings 2500 V 2500 V ±20 V ±30 V 1.5 A 6 .

IXTT1N250HV Features

* z High Blocking Voltage z High Voltage Package z Fast Intrinsic Diode z Low Package Inductance Advantages z Easy to Mount z Space Savings z High Power Density Applications z High Voltage Power Supplies z Capacitor Discharge z Pulse Circuits © 2012 IXYS CORPORATION, All Rights Reserved DS100521(12/

IXTT1N250HV-IXYS.pdf