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IXTT120N15P, IXTQ120N15P Datasheet - IXYS

IXTT120N15P - Power MOSFET

PolarHTTM Power MOSFET IXTQ 120N15P IXTT 120N15P N-Channel Enhancement Mode Avalanche Rated V= DSS ID25 = ≤ RDS(on) 150 V 120 A 16 mΩ Symbol VDSS V DGR VDSS VGSM ID25 ID(RMS) I DM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 175° C T J = 25° C to 175° C; R GS = 1 MΩ Continuous Transient TC = 25° C External lead current limit T C = 25° C, pulse width limited by T JM TC = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD

IXTT120N15P Features

* l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power density © 2005 IXYS All rights reserved DS99280E(10/05) Symbol g fs Ciss Coss Crss td(on) tr td(off) tf Qg(

IXTQ120N15P_IXYS.pdf

This datasheet PDF includes multiple part numbers: IXTT120N15P, IXTQ120N15P. Please refer to the document for exact specifications by model.
IXTT120N15P Datasheet Preview Page 2 IXTT120N15P Datasheet Preview Page 3

Datasheet Details

Part number:

IXTT120N15P, IXTQ120N15P

Manufacturer:

IXYS

File Size:

213.48 KB

Description:

Power mosfet.

Note:

This datasheet PDF includes multiple part numbers: IXTT120N15P, IXTQ120N15P.
Please refer to the document for exact specifications by model.

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