IXTT100N25P - N-Channel MOSFET
PolarHTTM Power MOSFET IXTK 100N25P IXTQ 100N25P IXTT 100N25P N-Channel Enhancement Mode Avalanche Rated V= DSS ID25 = ≤ RDS(on) 250 V 100 A 27 mΩ Symbol Test Conditions Maximum Ratings TO-264 (IXTK) V DSS VDGR VGSS VGSM ID25 ID(RMS) IDM IAR E AR EAS dv/dt PD TJ T JM Tstg TL TSOLD M d Weight T J = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM TC = 25° C T C = 25° C TC = 25° C .
IXTT100N25P Features
* l International standard packages l Unclamped Inductive Switching (UIS)
rated l Low package inductance
- easy to drive and to protect
Advantages
l Easy to mount l Space savings l High power density
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DS99118E(12/05)
Symbol
gfs C
iss
C oss
C rss
td(on) tr td(off) tf