IXTT10P60 Datasheet, MOSFET, IXYS

IXTT10P60 Features

• Mosfet z International Standard Packages z Low RDS (on) HDMOSTM Process z Rugged Polysilicon Gate Cell Structure z Avalanche Rated z Low Package Inductance - Easy to Drive and to Protect Advan

PDF File Details

Part number:

IXTT10P60

Manufacturer:

IXYS

File Size:

122.86kb

Download:

📄 Datasheet

Description:

Power mosfet.

IXTT10P60 Application

• Applications z High-Side Switching z Push Pull Amplifiers z DC Choppers z Automatic Test Equipment © 2013 IXYS CORPORATION, All Rights Reserved DS

TAGS

IXTT10P60

IXYS

📁 Related Datasheet

IXTT10P50 - P-Channel MOSFET (IXYS Corporation)
Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated VDSS ID25 RDS(on) IXTH/IXTT 10P50 IXTH/IXTT 11P50 -500 V -10 A 0.90 Ω -500 V -11.

IXTT100N25P - N-Channel MOSFET (IXYS Corporation)
PolarHTTM Power MOSFET IXTK 100N25P IXTQ 100N25P IXTT 100N25P N-Channel Enhancement Mode Avalanche Rated V= DSS ID25 = ≤ RDS(on) 250 V 100 A 27 mΩ.

IXTT10N100D2 - Depletion Mode MOSFET (IXYS)
Depletion Mode MOSFET N-Channel Preliminary Technical Information IXTH10N100D2 IXTT10N100D2 VDSX = ID(on) >  RDS(on) D 1000V 10A 1.5 G S TO-2.

IXTT110N10L2 - Power MOSFET (IXYS)
Advance Technical Information LinearL2TM Power MOSFET w/ Extended FBSOA IXTH110N10L2 IXTT110N10L2 VDSS = 100V ID25 = 110A ≤ RDS(on) 18mΩ N-Channel.

IXTT110N10P - N-Channel MOSFET (IXYS Corporation)
Advance Technical Information TM .. PolarHT Power MOSFET IXTQ 110N10P IXTT 110N10P VDSS ID25 RDS(on) = 100 = 110 = 15 V A mΩ N-.

IXTT11P50 - P-Channel MOSFET (IXYS Corporation)
Power MOSFETs P-Channel Enhancement Mode Avalanche Rated IXTH11P50 IXTT11P50 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL Tsold Md W.

IXTT120N15P - Power MOSFET (IXYS)
PolarHTTM Power MOSFET IXTQ 120N15P IXTT 120N15P N-Channel Enhancement Mode Avalanche Rated V= DSS ID25 = ≤ RDS(on) 150 V 120 A 16 mΩ Symbol VDSS.

IXTT12N140 - Power MOSFET (IXYS)
Advance Technical Information High Voltage Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTT12N140 IXTH12N140 VDSS.

IXTT12N150HV - N-Channel Power MOSFET (IXYS)
High Voltage Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode IXTT12N150HV VDSS = ID25 = RDS(on) 1500V 12A 2.2 TO-268HV Symbol VD.

IXTT140N075L2HV - Power MOSFET (IXYS)
Preliminary Technical Information LinearL2TM Power MOSFET w/Extended FBSOA N-Channel Enhancement Mode Avalanche Rated IXTT140N075L2HV IXTH140N075L2 .