IXTT12N150HV Datasheet - IXYS

IXTT12N150HV N-Channel Power MOSFET

High Voltage Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode IXTT12N150HV VDSS = ID25 = RDS(on) 1500V 12A 2.2 TO-268HV Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS  IDM, VDD  VDSS, TJ  150C TC = 25C Maximum Lead Temperature for Soldering Plastic Body for 10s Maximum Ratings 150.

IXTT12N150HV Features

* High Blocking Voltage

* High Voltage Package

* Fast Intrinsic Diode

* Low Package Inductance Advantages

* Easy to Mount

* Space Savings

* High Power Density Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS,

IXTT12N150HV-IXYS.pdf

IXTT12N150HV Datasheet Preview — Preview of IXTT12N150HV PDF

Datasheet Details

Part number:

IXTT12N150HV

Manufacturer:

IXYS

File Size:

156.39 KB

Description:

N-channel power mosfet.

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IXTT12N150HV IXTT12N150HV N-Channel Power MOSFET IXYS

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