* High Blocking Voltage
* High Voltage Package
* Fast Intrinsic Diode
* Low Package Inductance Advantages
* Easy to Mount
* Space Savings
* High Power Density Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS,
IXTT12N150HV Datasheet (156.39 KB)
IXTT12N150HV
IXYS
156.39 KB
N-channel power mosfet.
High Voltage Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode IXTT12N150HV VDSS = ID25 = RDS(on) 1500V 12A 2.2 TO-268HV Symbol VD.
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