IXTT12N150HV - N-Channel Power MOSFET
High Voltage Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode IXTT12N150HV VDSS = ID25 = RDS(on) 1500V 12A 2.2 TO-268HV Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS IDM, VDD VDSS, TJ 150C TC = 25C Maximum Lead Temperature for Soldering Plastic Body for 10s Maximum Ratings 150
IXTT12N150HV Features
* High Blocking Voltage
* High Voltage Package
* Fast Intrinsic Diode
* Low Package Inductance Advantages
* Easy to Mount
* Space Savings
* High Power Density Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS,
