IXTT12N150HV N-Channel Power MOSFET

IXYS

Description

High Voltage Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode IXTT12N150HV VDSS = ID25 = RDS(on) 1500V 12A 2.2 TO-268HV Symbol VD.

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Datasheet Specifications

Part number: IXTT12N150HV
Manufacturer: IXYS
File Size: 156.39 KB
Datasheet: IXTT12N150HV-IXYS.pdf
Description: N-Channel Power MOSFET

Features

* High Blocking Voltage
* High Voltage Package
* Fast Intrinsic Diode
* Low Package Inductance Advantages
* Easy to Mount
* Space Savings
* High Power Density Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS,

Applications

* High Voltage Power Supplies
* Capacitor Discharge
* Pulse Circuits © 2015 IXYS CORPORATION, All Rights Reserved DS100530B(6/15) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 20V, ID = 0.5
* ID25, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f =

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IXTT12N150HV N-Channel Power MOSFET IXYS

IXYS IXTT12N150HV-like datasheet