Datasheet Details
- Part number
- IXTT12N150HV
- Manufacturer
- IXYS
- File Size
- 156.39 KB
- Datasheet
- IXTT12N150HV-IXYS.pdf
- Description
- N-Channel Power MOSFET
IXTT12N150HV Description
High Voltage Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode IXTT12N150HV VDSS = ID25 = RDS(on) 1500V 12A 2.2 TO-268HV Symbol VD.
IXTT12N150HV Features
* High Blocking Voltage
* High Voltage Package
* Fast Intrinsic Diode
* Low Package Inductance
Advantages
* Easy to Mount
* Space Savings
* High Power Density
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS,
IXTT12N150HV Applications
* High Voltage Power Supplies
* Capacitor Discharge
* Pulse Circuits
© 2015 IXYS CORPORATION, All Rights Reserved
DS100530B(6/15)
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs
VDS = 20V, ID = 0.5
* ID25, Note 1
Ciss Coss Crss
VGS = 0V, VDS = 25V, f =
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