* z z 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-3P TO-268 (TO-3P) 300 1.13/10 Nm/lb.in. 5.5 5.0 g g z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Symbol Test Conditions (TJ = 25°C, unles
IXTT110N10P Datasheet (612.25 KB)
IXTT110N10P
IXYS Corporation
612.25 KB
N-channel mosfet.
Advance Technical Information TM www.DataSheet4U.com PolarHT Power MOSFET IXTQ 110N10P IXTT 110N10P VDSS ID25 RDS(on) = 100 = 110 = 15 V A mΩ N-.
📁 Related Datasheet
IXTT110N10L2 Power MOSFET (IXYS)
IXTT11P50 P-Channel MOSFET (IXYS Corporation)
IXTT100N25P N-Channel MOSFET (IXYS Corporation)
IXTT10N100D2 Depletion Mode MOSFET (IXYS)
IXTT10P50 P-Channel MOSFET (IXYS Corporation)
IXTT10P60 Power MOSFET (IXYS)
IXTT120N15P Power MOSFET (IXYS)
IXTT12N140 Power MOSFET (IXYS)
IXTT12N150 High Voltage Power MOSFET (IXYS)
IXTT12N150HV N-Channel Power MOSFET (IXYS)
