IXTQ140N10P_IXYSCorporation.pdf
Datasheet Details
Part number:
IXTT140N10P, IXTQ140N10P
Manufacturer:
IXYS Corporation
File Size:
202.82 KB
Description:
Power mosfet.
Note:
This datasheet PDF includes multiple part numbers: IXTT140N10P, IXTQ140N10P.
Please refer to the document for exact specifications by model.
IXTT140N10P, IXTQ140N10P, Power MOSFET
PolarHTTM Power MOSFET www.datasheet4u.com IXTQ 140N10P IXTT 140N10P VDSS ID25 RDS(on) = = ≤ 100 V 140 A 11 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Continuous Transient TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, T
IXTT140N10P Features
* l l 1.13/10 Nm/lb.in. 5.5 5.0 g g l International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID
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