IXTT12N150 - High Voltage Power MOSFET
High Voltage Power MOSFET IXTT12N150 IXTH12N150 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS IDM, VDD VDSS, TJ 150C TC = 25C 1.6mm (0.062 in.) From Case for 10s Plastic Body for 10s Mounting Torque TO-268 TO-247 Maximum Ratings
IXTT12N150 Features
* International Standard Packages
* Molding Epoxies Weet UL 94 V-0 Flammability Classification
* Fast Intrinsic Diode
* Low Package Inductance Advantages
* Easy to Mount
* Space Savings
* High Power Density Applications
* High Voltage Power Supplies
* Capacitor Di