IXTT12N150 High Voltage Power MOSFET

IXYS

Description

High Voltage Power MOSFET IXTT12N150 IXTH12N150 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM.

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Datasheet Specifications

Part number: IXTT12N150
Manufacturer: IXYS
File Size: 181.29 KB
Datasheet: IXTT12N150-IXYS.pdf
Description: High Voltage Power MOSFET

Features

* International Standard Packages
* Molding Epoxies Weet UL 94 V-0 Flammability Classification
* Fast Intrinsic Diode
* Low Package Inductance Advantages
* Easy to Mount
* Space Savings

Applications

* High Voltage Power Supplies
* Capacitor Discharge
* Pulse Circuits © 2015 IXYS CORPORATION, All Rights Reserved DS100425C(6/15) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 20V, ID = 0.5
* ID25, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f =

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IXTT12N150 High Voltage Power MOSFET IXYS

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