IXTT110N10L2 - Power MOSFET
Advance Technical Information LinearL2TM Power MOSFET w/ Extended FBSOA IXTH110N10L2 IXTT110N10L2 VDSS = 100V ID25 = 110A ≤ RDS(on) 18mΩ N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated TO-247 (IXTH) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.063in) from Case for 10s Plastic.
IXTT110N10L2 Features
* z Designed for Linear Operation z International Standard Packages z Avalanche Rated z Integrated Gate Resistor for Easy
Paralleling z Guaranteed FBSOA at 75°C
Advantages
z Easy to Mount z Space Savings z High Power Density
Applications
z Solid State Circuit Breakers z Soft Start Controls z Linear Am