IXTT11P50 Datasheet - IXYS Corporation

IXTT11P50 P-Channel MOSFET

Power MOSFETs P-Channel Enhancement Mode Avalanche Rated IXTH11P50 IXTT11P50 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247) TO-268 TO-247 Maximum Ratings - 500 V - 500 V ±20 V ±30 V - 11 A - 44 A - 11 .

IXTT11P50 Features

* z International Standard Packages z Low RDS (on) HDMOSTM Process z Rugged Polysilicon Gate Cell Structure z Avalanche Rated z Low Package Inductance - Easy to Drive and to Protect Advantages z Easy to Mount z Space Savings z High Power Density © 2013 IXYS CORPORATION, All Rights Reserved DS94535L(

IXTT11P50_IXYSCorporation.pdf