IXTT48P20P, IXTH48P20P Datasheet - IXYS Corporation

IXTT48P20P Power MOSFET

Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTH48P20P IXTT48P20P VDSS ID25 RDS(on) = = ≤ - 200V - 48A 85mΩ TO-247 (IXTH) Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings - 200 - 200 ±.

IXTT48P20P Features

* z z z z 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Mounting torque (TO-247, TO-3P) Mounting force (PLUS220) TO-247 TO-268 300 260 1.13 / 10 11..65 / 2.5..14.6 6 5 International standard packages Avalanche Rated Rugged PolarPTM process Low package inductance - easy to drive and to p

IXTH48P20P-IXYSCorporation.pdf