IXTT440N055T2, IXTH440N055T2 Datasheet - IXYS

IXTT440N055T2 Power MOSFET

Advance Technical Information TrenchT2TM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTH440N055T2 IXTT440N055T2 VDSS ID25 RDS(on) = 55V = 440A ≤ 1.8mΩ TO-247 (IXTH) Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C Max.

IXTT440N055T2 Features

* z z 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247) TO-247 TO-268 300 260 1.13 / 10 6 4 International Standard Packages 175°C Operating Temperature z High Current Handling Capability z Avalanche Rated z Fast Intrinsic Diode z Low R DS(on) Advantages z Symb

IXTH440N055T2-IXYS.pdf