IXTT02N450HV Datasheet - IXYS

IXTT02N450HV - High Voltage Power MOSFET

High Voltage Power MOSFET IXTT02N450HV IXTH02N450HV VDSS I D25 RDS(on) = 4500V = 200mA  625 N-Channel Enhancement Mode Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque TO-268HV TO-247HV Maximum Ratings 4500 V 4500 V 20 V 30 V 200 mA 600.

IXTT02N450HV Features

* High Blocking Voltage

* High Voltage Packages Advantages

* Easy to Mount

* Space Savings

* High Power Density Applications

* High Voltage Power Supplies

* Capacitor Discharge Applications

* Pulse Circuits

IXTT02N450HV-IXYS.pdf