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IXTT24P20, IXTH24P20 Datasheet - IXYS

IXTT24P20 Standard Power MOSFET

Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTH 24P20 IXTT 24P20 VDSS = - 200 V ID25 = - 24 A ≤RDS(on) 0.15 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR PD TJ TJM Tstg Md Weight Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJ TC = 25°C TC = 25°C TC = 25°C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Plastic Body for .

IXTT24P20 Features

* International standard packages

* Low RDS (on) HDMOSTM process

IXTH24P20-IXYS.pdf

This datasheet PDF includes multiple part numbers: IXTT24P20, IXTH24P20. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

IXTT24P20, IXTH24P20

Manufacturer:

IXYS

File Size:

619.06 KB

Description:

Standard power mosfet.

Note:

This datasheet PDF includes multiple part numbers: IXTT24P20, IXTH24P20.
Please refer to the document for exact specifications by model.

IXTT24P20 Distributor

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TAGS

IXTT24P20 IXTH24P20 Standard Power MOSFET IXYS